Semiconductor Materials for High Frequency Solid State Sources.
Abstract
This report summarizes the results of a study undertaken to examine the role of band structure, material characteristics, device feature size, and donor density on the electrical properties of two and three terminal submicron scale semiconductor devices. The study is based on the introduction of scaling to the space and time dependent moments of the Boltzmann transport equation. The study broadly concludes that while gallium arsenide is likely to remain the material of choice for present high speed-high frequency applications, materials with scattering rates higher than that of gallium arsenide, while retaining negative differential mobility, are to be sought after two terminal active device operation. Materials with scattering rates below that of gallium arsenide are to be sought after for three terminal operation. It is demonstrated that the significant figures of merit for FET operation should be based on the T valley mobility, rather than the high field saturated drift velocity. A hierarchy of materials choices is suggested in this study. Originator-supplied keywords include: submicron devices, high speed transport, velocity overshoot, gallium arsenide, indium phosphide, gallium indium arsenide, band structure, scaling, and velocity saturation.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 18, 1985
- Accession Number
- ADA150020
Entities
People
- B. J. Morrison
- H. L. Grubin
- J. P. Kreskovsky
- M. Meyyappan