Studies of Silicon-Refractory Metal Interfaces: Photoemission Study of Interface Formation and Compound Nucleation.

Abstract

The overall goal in this project was to examine the electronic and morphological interactions which occur at interfaces involving Si and metal overlayers. During the course of this project, we examined overlayers of Cr, Ti, Sm, Au, Ca, Ce, and Cu using photoelectron spectroscopy, Auger spectroscopy and LEED. A new technique involving angle-resolved Auger profiling was developed to determine the atomic density profile for interfaces. Its utility was demonstrated through studies of Cu/Si, Au/Si, and Ce/Si. Exhaustive use of synchrotron radiation photoemission has lead to a detailed understanding of the electronic bonding of silicides and metal/silicon interfaces. Collaborative studies with theorists gave rise to modeling of interfaces and calculation of electronic energy states for ordered silicides. Originator furnished keywords include: Refractory metal silicides; interfaces; reactions at surfaces; silicon contacts.

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Document Details

Document Type
Technical Report
Publication Date
Oct 29, 1984
Accession Number
ADA150075

Entities

People

  • J. H. Weaver

Organizations

  • University of Minnesota

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Chemical Reactions
  • Chemistry
  • Critical Temperature
  • Crystal Structure
  • Detectors
  • Diffraction
  • Electron Beams
  • Electron Emission
  • Electrons
  • Energy Bands
  • Materials
  • Materials Science
  • Measurement
  • Phase Diagrams
  • Photoexcitation
  • Spectra
  • Spectroscopy

Fields of Study

  • Physics

Readers

  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene