Evaluation of the Use of Sputter Profiling with XPS or AES for the Study of Surface Carburization Resulting from High Energy (>20 keV) Ion Implantation
Abstract
We have previously used Auger depth profiling with Xe ion etching to determine the extent of carburization resulting from ion implantation. An ongoing study with Dr. Ken Grabowski will be described in the next report. In this report we have investigated the possibility of surface carburization resulting from the low energy ion bombardment associated with sputter profiling. When a sample is analyzed by AES or XPS a surface contaminant layer of carbonacious material is always observed. The source of the contamination may be external and/or vacuum related. The following are likely sources: Atmospheric, Cleaning solvents, Rotary pump oil during initial pump down, Diffusion pump fluid (polyether), and Out-gassing of anodes and filaments. The carbon contamination layer has been examined as a source of carbide formation at the near surface region of the substrate of a high purity Cr sample. The influence of the Xe ion acceleration potential, the amount of carbon contamination and the thickness of the surface oxide layer on the amount of carbide formed was determined.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 29, 1983
- Accession Number
- ADA150092
Entities
People
- C. R. Clayton
Organizations
- State University of New York