Low Capacitance E-Beam Fabricated Beam-Lead Schottky Barrier Diodes.
Abstract
A unique method has been proposed in earlier reports for fabricating low capacitance beam-lead diodes for use in millimeter and sub-millimeter integrated circuits. This consists in millimeter integrated circuits. This consists in removing all the GaAs material except from a small region (20 micrometers in diameter) in the immediate location of the actual Schottky contact. This will have the effect of drastically reducing the beam overlay capacitance leading to a device whose capacitance is dominated by the junction capacitance. This will therefore not suffer the conversion loss degradation observed in conventional beam-lead devices at frequencies greater than about 100GHz. In this report the major processing steps necessary to fabricate the diode are described in detail. There were developed on bulk GaAs. Originator furnished keywords include: Beam-lead, Schottky barrier diode, Millimeter wavelengths.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1984
- Accession Number
- ADA150238
Entities
People
- G. T. Wrixon
- U. S. Lidholm
Organizations
- University College Cork