Development of a Planar Heterojunction Bipolar Transistor for Very High Speed Logic.

Abstract

The objective of this research project is to develop heterostructure bipolar transistors for very-high-speed logic. During the second year of effort, significant progress was made on (Al,Ga)As/GaAs HBTs of both emitter-down and emitter-up configurations, with current gains of 10 or greater being observed in both cases for base dopings which exceed emitter dopings. Structural modifications were evaluated which led to increased injection and reduced recombination currents. Annealing systems were constructed and characterized for activation of Be ion-implantations. Promising initial studies of (In,Ga)P/GaAs HBTs has led to their inclusion in this research project for the third year of effort.

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Document Details

Document Type
Technical Report
Publication Date
Nov 21, 1984
Accession Number
ADA150374

Entities

People

  • S. I. Long

Organizations

  • University of California, Santa Barbara

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Capacitance
  • Electrical Properties
  • Energy Bands
  • Energy Gaps
  • Engineering
  • Epitaxial Growth
  • Etching
  • Fabrication
  • Failure Mode And Effect Analysis
  • Heterojunction Bipolar Transistors
  • Implantation
  • Ion Implantation
  • Materials
  • Measurement
  • Resistance
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Software Engineering