Visible-Millimeter Solid State Research.
Abstract
A Visible - Millimeter Wave mixing system has been set up with all components operating satisfactory and locked to stabilized cavities. Using this system, mixing has been obtained in semiconductor devices with frequency separations ranging up to 100 GHz., in a number of GaAs and GaAs/A1GaAs devices. These devices include commercial FETs, state of the art industrial FETs, HEMT structures fabricated as part of this program and Heterojunction bi-polar transistors supplied by local industry on a collaborative basis. Many of the initial goals of the first and second stages of this program have been achieved or are well underway. For example, mixing in short gate length FETs has been used to injection lock oscillators at frequencies up to 20 GHz. The mixing in HEMTs structure has proved to be extremely interesting when studied as a function of temperature. Improvements in transconductance as a result of increased carrier mobility are reflected in the mixing efficiencies. Finally these experiments have been extended to heterojunction bi-polarss showing that these devices have extremely fast response times limited by circuit parasitics. In the current phase of this program, devices specifically tailored to these experiments are being designed and tested. The goal is to obtain wideband width control of HEMT, and other novel three terminal layered, oscillators using fiber optics for efficient injection locking at millimeter wave frequencies. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1984
- Accession Number
- ADA150490
Entities
People
- H. R. Fetterman
Organizations
- University of California, Los Angeles