Clustering and Ordering in III-V Alloys.
Abstract
The III-V semiconducting alloys are typically grown by epitaxial techniques at temperatures where, in the absence of substrate effects, they are thermodynamically unstable. This can result in problems associated with clustering of like atoms or ordering of unlike atoms. Long-range ordering could yield interesting III-V ternary compounds. The mixing enthalpy of III-V semiconductor alloys is fairly well described by regular solution theory, with a thermodynamic interaction parameter that is sensitive to the lattice spacing of the binary constituents. An estimate of the interaction parameter is derived from a model which ascribes the mixing enthalpy to bond distortions associated with the alloy formation, and relates these to the macroscopic elastic properties of the crystal. Numerical estimates are given for the 18 alloys with cations Al, Ga, In and anions P, As, Sb, and these are compared with experimental values and alternative models. To within a single adjustable parameter, the predictions agree with experiment and are consistent with those of the delta lattice parameter (DLP) model. Originator furnished keywords include: Alloy composition; Fluctuations; Ordering; InxGa.1-xP; GaAs; ZnSnP2; Crystal structure; Chalcopyrite; Heterojunctions; Interfacial energy gaps.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 31, 1984
- Accession Number
- ADA150604
Entities
People
- C. M. Wolfe
- E. A. Patten
- M. W. Muller
- P. A. Fedders
- ShengâJen Hsieh
Organizations
- University of Washington