Charge Transfer, Polarization and Relaxation Effects in the Auger Lineshapes of Si.
Abstract
The Auger lineshapes of Si are quantitatively interpreted noting particularly the core hole screening effects as exhibited through charge transfer, polarization, and atomic relaxation. The KL sub 1v, KL sub 23 V, and L sub 1 L sub 23V lineshapes reflect a core hole screened density of states, DOS consistent with the core hole in the final state of these processes. A DOS appropriate for the screened core hole is obtained by distorting the theoretical DOS for the ground state utilizing the Green's function for a tight binding Hamiltonian and a central cell potential. Comparison of the L sub 23 VV and KVV lineshapes reveal large differences. These difference are discussed in the context of surface effects, intrinsic and extrinsic plasmon losses, and final state shakeoff. The L sub 23 VV and KVV lineshapes also suggest some distortion effects due to final state hole correlation. The KL sub 23 L sub 23 lineshape is interpreted in the context of similar lineshapes for Na, Mg, Al and P; all show plasmon losses, and except for P, initial state shakeoff contributions. Originator-supplied keywords include: Auger electron spectroscopy, Silicon, Screening, Shakeoff, Charge polarization.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1984
- Accession Number
- ADA150938
Entities
People
- David E. Ramaker
- F. L. Hutson
- N. H. Turner
- W. N. Mei
Organizations
- George Washington University