Infrared Nonlinear Processes in Semiconductors.

Abstract

Intervalence band relaxation times have been measured, in the picosecond range, in p-type GaAS and Ge. These measured times are in agreement with those calculated for optics phonon mediated processes. An anticrossing, predicted by People and Wolff, has been observed between As donor levels of opposite spin in Ge. A theory has been developed, which, with no adjustable parameters, provides good agreement with experiment. Originator-supplied keywords include: Infrared, Nonlinear optics, and Semiconductors.

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Document Details

Document Type
Technical Report
Publication Date
Jan 04, 1985
Accession Number
ADA150966

Entities

People

  • C. Jagannath
  • D. M. Larsen
  • P. A. Wolff
  • R. L. Aggarwal
  • S. Y. Yuen

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Agreements
  • Carbon Dioxide Lasers
  • Electro-Optics
  • Frequency
  • Laser Beams
  • Lasers
  • Magnetic Fields
  • N Type Semiconductors
  • Nonlinear Optics
  • Optics
  • P Type Semiconductors
  • Physics
  • Plasma Waves
  • Relaxation Time
  • Semiconductors
  • Spectroscopy
  • Wave Mixing

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics