Fabrication and I-V Characterization of AlGaAs/GaAs MODFETs with P-Type Surface Layers Grown by Molecular Beam Epitaxy.

Abstract

The effects of highly doped p+ surface layers on the Schottky barrier of n-type AlGaAs/GaAs MODFETs (Modulation doped FET's) were investigated for this thesis. Normal AlGaAs/GaAs MODFET structures were first grown on top of semi-insulating GaAs structures using molecular beam epitaxy (MBE) and then thin p+ (50 A) surface layers were grown on top of the MODFET structures. Two different sequential evaporations (Au/Ni/Au/Ge/Ni, Au/Ni/Au/Ge) were used for the source/drain contacts. The results show that these two sequential evaporations do not work on MODFETs with p+ surface layers. High resistance, rectifying source/drain contacts resulted. Originator-supplied keywords include: Aluminum gallium arsenide, Heterojunctions, Field effect transistors, and Schottky barrier devices.

Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1984
Accession Number
ADA151695

Entities

People

  • K. Szabo

Organizations

  • Air Force Institute of Technology

Tags

DTIC Thesaurus Topics

  • Epitaxial Growth
  • Evaporation
  • Field Effect Transistors
  • Gallium Arsenides
  • High Electron Mobility Transistors
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Schottky Barrier Devices
  • Transistors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics