A Study of Ga(.47)In(.53)As and Al(.48)In(.52)As for Very High Frequency Device Applications.

Abstract

GaInAs/AlInAs modulation doped structures grown by molecular beam epitaxy (MBE) were studied. The parameters of the MBE growth were adjusted to give high room temperature mobilities (-12000 sq cm/v-sec) and high sheet electron concentrations 2 x 10 to the 12th power per sq cm. Because of higher electron velocities and high conductivities GaInAs modulation doped transistors should be significantly higher speed than those of GaAs. Originator-Supplied keywords include: Gallium indium arsenide, Aluminum indium arsenide, Indium phosphide, Modulation doping, Two dimensional electron gas, Field effect transistor, and Molecular beam epitaxy.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1985
Accession Number
ADA151995

Entities

People

  • D. W. Woodard
  • G. W. Wicks
  • L. F. Eastman

Organizations

  • Cornell University College of Engineering

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Electron Density
  • Electron Gas
  • Electronics Laboratories
  • Electrons
  • Field Effect Transistors
  • Frequency
  • Heat Treatment
  • Heterojunctions
  • Materials
  • Metal-Semiconductor Junctions
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Semiconductor Devices
  • Semiconductors
  • Transistors
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics