Fundamental Studies of Growth, Doping and Transformation in Beta Silicon Carbide.

Abstract

During this three-year granting period, this growth and characterization of high purity and high quality Beta-SiC thin films has reached a highly sophisticated level. This report details the CVD growth and in situ doping and the thermodynamic considerations thereof as well as ion implantation; SIMS, TEM, Auger, Raman and electrical characterization; ohmic contact studies; oxidation experiments and the fabrication of Schottky barrier diodes and p-n junctions. Originator-supplied keywords include: Silicon carbide, Chemical Vapor Deposition, Electronic Materials, In Situ Doping, Ion Implantation, Thermodynamics, EM, Secondary Ion Mass Spectroscopy, Electrical Properties, Raman Spectroscopy, Oxidation, Schottky Diode, P-N Junction, MOS Device.

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Document Details

Document Type
Technical Report
Publication Date
Feb 20, 1985
Accession Number
ADA152047

Entities

People

  • H. H. Stadelmaier
  • Robert F Davis

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Ceramic Materials
  • Charge Carriers
  • Chemical Vapor Deposition
  • Chemistry
  • Compound Semiconductors
  • Crystal Lattices
  • Crystal Structure
  • Crystals
  • Electrical Properties
  • Epitaxial Growth
  • Materials
  • Materials Processing
  • Materials Science
  • Plastic Explosives
  • Schottky Diodes
  • Semiconductors
  • Silicon Carbide

Fields of Study

  • Materials science

Readers

  • Electrical Engineering
  • Technical Research and Report Writing.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene