InP Materials.
Abstract
The goals of the InP materials program T Lincoln Lab are the development of reliable techniques for preparing high-quality InP (Indium Phosphide) crystals with controlled electrical properties and the utilization of these techniques to produce crystals needed for research on optoelectronic devices such as InP photoconductive switches and GaInAsP/InP diode lasers and detectors and on electronic devices such as JFETs. The program consists of two parts: synthesis of InP from the elements, and crystal growth by the liquid-encapsulated Czochralski (LEC) method. Synthesis is carried out in order to assure an adequate supply of charge material with the purity desired for LEC growth, since such material is not consistently available from commercial sources. The principal donor in less pure polycrystalline ingots was identified as Si, which probably originated in the as-received P. Initial experiments have been performed on in situ synthesis of InP in the LEC puller, measurement of the microscopic growth rate of LEC crystals, and the use of a two-piece susceptor to reduce the dislocation density in these crystals. Keywords: InP synthesis, and InP crystal growth.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1984
- Accession Number
- ADA152341
Entities
People
- G. W. Iseler
Organizations
- Massachusetts Institute of Technology