Thin Films Properties of Sputtered Niobium Silicide on SiO2, Si3N4 and on N+ Poly-Si.

Abstract

The thin film properties of sputtered niobium silicide on SiO2, Si3N4 and n(+) doped poly-Si have been investigated. The structural and compositional properties were studied with X-ray diffraction, Rutherford backscattering spectrometry and secondary ion mass spectroscopy. Niobium silicide thin films are deposited on SiO2, Si3N4 and n(+)poly-Si have been characterized. Similar to the other refractory silicides, annealing at high temperatures resulted in structural recrystallization and a sharp decrease in resistivity. After annealing at 1000 C, a resistivity of approx. 70 microohms-cm was obtained. For a 2500A NbSi2/2500A N(+)poly-Si stack, a sheet resistance of 2.5 ohms/square after annealing at the same temperature.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1985
Accession Number
ADA152378

Entities

People

  • A. J. Steckl
  • B. J. Baliga
  • T. P. Chow
  • W. J. Lu

Organizations

  • Rensselaer Polytechnic Institute

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Annealing
  • Backscattering
  • Diffraction
  • Elements
  • Films
  • High Temperature
  • Mass Spectrometry
  • Mass Spectroscopy
  • Military Research
  • Resistance
  • Spectrometry
  • Spectroscopy
  • Thin Films
  • United States
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.