Random Access Memory Technologies.
Abstract
This paper is the result of an inhouse study of random access memory technologies. Silicon, of course, has a firm grip on the computer industry, and the different silicon processes are discussed. However, many alternative technologies are under development. Gallium arsenide and Josephson junctions have been pursued in hopes of higher speeds and lower power consumption. Silicon on sapphire and silicon on insulator have been developed to enhance silicon's performance and eliminate such problems as latch up. Finally, the need for data retention when power is lost has spawned the existence of non-volatile memories, not only in silicon, but also in magnetic memories. Each technology's strong points and drawbacks are presented, as well as the hurdles to be overcome for further development. Emphasis is given to requirements for military applications, such as a wide temperature and radiation hardness. In this light, it is fitting that the Department of Defense's VHSIC program and its Phase I memories are also described in this paper. Originator-supplied keywords included: Computer random access memories, Silicon controlled rectifiers, Cache memory system, Memory chips, and MOS (Metal Oxide Semiconductor).
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1985
- Accession Number
- ADA153089
Entities
People
- K. W. Devaney
Organizations
- Rome Laboratory