Materials-Process Interactions in Ternary Alloy Semiconductors.
Abstract
Properties of InGaAs,implantation doping of InGaAs, Photoluminescence Properties of InGaAs, surface studies on InGaAs, X-ray photoelectron spectroscopy and electron energy loss spectroscopy studies in InGaAs. The report describes the electrical and optical properties of In(0.53)Ga(0.47)As layers grown by liquid phase epitaxy on InP substrates. The report also describes on implantation doping experiments to form n- and p-type layers in In(0.53)Ga(0.47)As. High degree of n-type electrical activation can be achieved in Si-implanted samples. Formation of p-type layers by Be- or Mg-ion implantation is much more difficult. X-ray photoemission (ELS) studies show that the native oxides present on chemically etched In(0.53)Ga(0.47)As consist predominantly of As2O3 and oxides of In. Plasma enhanced deposition of SiO2 at 300 deg C does not significantly change the thickness of the native oxide. Although capacitance-voltage measurements on the MIS capacitors on In(0.53)Ga(0.47)As exhibit high, the surface potential can be modulated, PECVD SiO2 appears to be a viable candidate as a gate dielectric for In(0.53)Ga(0.47)As MISFETs.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1984
- Accession Number
- ADA153133
Entities
People
- G. S. Kamath
- H. L. Dunlap
- J. F. Wager Iii
- K. V. Vaidyanathan
Organizations
- HRL Laboratories