The Construction and Study of Improved Al(x)Ga(1-x)As-GaAs Heterostructure Devices.
Abstract
The III-V materials GaAs, Al sub x Ga subl-x As, AlAs offers important advantages that make possible the fabrication of a large range of sophisticated heterostructure devices. The devices that have concerned us most are: quantum-well heterostructure lasers, heterostructure phototransistors, real-space transfer devices, and high electron mobility transistors. This report describes extensive studies of the optical and electrical properties of these devices as well as the physical properties of semiconductor heterolayer structures. Emphasis was placed on superlattice disordering and pattern generation by silicon diffusion; stripe-geometry and buried-heterostructure lasers have been realized by this method (i.e., impurity-induced disordering). Tunable laser operation in external gratings as well as under hydrostatic pressure has been accomplished with quantum-well heterostructures. This has resulted, for the first time, in tunable semiconductor laser operation over a 100 meV range. The theory of the dielectric constant of superlattices has also been considerably refined. Two manuscripts have been devoted to the two-dimensional modeling of the high mobility transistor and one manuscript discusses the interface quality of our MOCVD-grown superlattices. Additional keywords: submicron structures; heterojunction transport.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1985
- Accession Number
- ADA153264
Entities
People
- G. E. Stillman
- J. J. Coleman
- K. Hess
- N. Holonyak Jr.
Organizations
- University of Illinois Urbana–Champaign