Growth Mechanism and Properties of the Thermal and Anodic Oxides of the III-V Compound Semiconductors.

Abstract

The mechanisms of oxide growth on InP, GaP, GaAs, and InGaAs were investigated and their electrical properties measured. Islands were observed as the initial stage of anodization of InP and GaAs but the details of the growth on the two materials are different. The thermal oxides of InP and GaP also differ in composition and surface topography. InP forms bubbles and GaP has pits under the oxide. Traps at the deposited insulator/InP interface were also investigated. Originator supplied keywords include: Thermal oxidation.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1985
Accession Number
ADA153406

Entities

People

  • C. W. Wilmsen

Organizations

  • Colorado State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Anodizing
  • Band Gaps
  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Conduction Bands
  • Electrical Properties
  • Electrical Resistance
  • Electrons
  • Energy Bands
  • Films
  • Heat Treatment
  • High Pressure
  • High Temperature
  • Materials
  • Oxide Films
  • Oxides
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene