1.5 Micrometer GaInAsP High Pulsed Power Diode Lasers.

Abstract

The growth condition for fabricating 1.5 micron lasers using LPE techniques has been established. High power performance and external quantum efficiency of the laser are studied. Keywords include: Semiconductor lasers, GAInAsP/InP, 1.5 microns.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Mar 04, 1985
Accession Number
ADA153568

Entities

People

  • J. J. Hsieh

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Efficiency
  • Emission
  • Heterojunctions
  • High Temperature
  • Laser Arrays
  • Laser Diodes
  • Laser Resonators
  • Lasers
  • Micrometers
  • Military Research
  • Power
  • Pulsed Power
  • Quantum Efficiency
  • Semiconductor Lasers
  • Semiconductors
  • Substrates

Fields of Study

  • Engineering
  • Physics

Readers

  • Pulsed Power and Plasma Physics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics
  • Quantum Computing