The Photochemical Oxidation of GaAs.
Abstract
The vacuum ultraviolet photochemical oxidation of GaAs by N2O (wavelengths of 2537 A and 1849 A) was studied by X-ray photoelectron spectroscopy. We believe the model most consistent with our data involves (1) adsorption of molecular N2O, (2) dissociation of the N2O on the surface, and (3) oxidation of the surface by the adsorbed O atoms. The temperature dependence of the overall reaction on the stoichiometric surface is dominated by the temperature dependence of adsorption of N2O. As As-rich surface oxidizes more slowly, and the reaction saturates; in this case the rate-limiting step and the cause of saturation is the oxidation of the surface by adsorbed O atoms. The As-covered surface does not present the proper sites (As atoms surrounded by Ga atoms) for fast, continued oxidation of GaAs.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 11, 1985
- Accession Number
- ADA153689
Entities
People
- P. A. Bertrand
Organizations
- The Aerospace Corporation