Development of Photodetectors.

Abstract

Vapour-phase-epitaxial techniques have been used to fabricate InGaAs/InP avalanche photodiodes having a 'SAM' configuration. The APD's are mesa-etched and are unpassivated. Stable operation up to gains of about 10 has been demonstrated. Noise of all units tested has been somewhat high due to a high value of Kerr (about 0.6), and due to high bulk dark currents. Attempts to develop a satisfactory passivation for the mess-etched devices have been largely unsuccessful. Keywords include: Avalanche Photodiodes; Vapour-Phase-Epitaxy; Passivation.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1985
Accession Number
ADA153773

Entities

People

  • P. Webb
  • R. Mcintyre

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Amplifiers
  • Avalanche Photodiodes
  • Capacitance
  • Detection
  • Detectors
  • Diodes
  • Dynamic Range
  • Fiber Optics
  • Fibers
  • Field Effect Transistors
  • Impedance
  • Long Wavelengths
  • Photodiodes
  • Pin Diodes
  • Plastic Explosives
  • Power Supplies

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Directed Energy