Electron Irradiation of Light Emitting Diodes.

Abstract

An experiment is described in which 30-MeV electrons were used to irradiate LEDs. A brief description of typical electron radiation sources is given along with a description of the effects of electron radiation on semiconductors. Using a simple model for LED current generation, a set of equations for determining phenomenological damage constants is given. The damage sustained by the LEDs increased total current but reduced radiative current for a given voltage and was similar to that seen by earlier workers performing comparable experiments with electrons, protons, and neutrons. Four groups of LEDs were studied. Keywords include: electron irradiation, light emitting diodes, LEDs, radiation effects, liquid phase epitaxy, vapor phase epitaxy, LPE, VPE, GaAs, GaP, and GaAs(x)P(1-x).

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1984
Accession Number
ADA154441

Entities

People

  • C. Q. Ness

Organizations

  • Naval Postgraduate School

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Space

DTIC Thesaurus Topics

  • Charged Particles
  • Crystal Lattices
  • Electromagnetic Radiation
  • Electron Irradiation
  • Electrons
  • Energy
  • Equations
  • Gamma Rays
  • High Energy
  • Integrated Circuits
  • Ionization
  • Light Emitting Diodes
  • Linear Accelerators
  • Liquid Phase Epitaxy
  • Liquid Phases
  • Semiconductor Devices
  • Semiconductors

Fields of Study

  • Physics

Readers

  • Pulsed Power and Plasma Physics.
  • Semiconductor Device Technology
  • Theoretical Analysis.

Technology Areas

  • Microelectronics