Microwave Semiconductor Research - Materials, Devices and Circuits and Gallium Arsenide Ballistic Electron Transistors.
Abstract
This program covers the growth and assessment of Gallium Arsenide, and related compounds and alloys, for use in microwave, millimeter, and optical devices. It also covers the processing of the material into devices, and the testing of the devices. It also covers the processing of the material into devices, and the testing of the devices. Both molecular beam epitaxy (MBE) and organo-metallic vapor phase epitaxy (OMVPE) are used for growth. Materials assessment is included. Short modulation doped heterojunction bipolar transistors, are covered. The following is a list of tasks pursued: Growth and characterization of GaAs for high performance microwave devices, Investigation of microwave field-effect transistor performance limits set by layer composition and contact geometry, Use of MBE tailored profiles for GaAs power FET's for improved performance, MBE multiple GaAs-Al(x)Ga(1-x)As heterojunctions for confinement of electrons for improved FET performance, High speed receivers for optical communications, Dynamic and spectral characteristics of semiconductor laser materials and structures, Carrier dynamics in compound semiconductors studied with picosecond optical excitation, Advanced design techniques for microwave GaAs FET amplifiers, Wide band circuits and systems, and (Ballistic task) Gallium arsenide ballistic electron transistors.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1985
- Accession Number
- ADA154698
Entities
People
- C. L. Tang
- D. W. Woodard
- G. W. Wicks
- J. Ballantyne
- L. F. Eastman
Organizations
- Cornell University College of Engineering