Application of a Resistance Heater to the MOCVD (Metal-Organic Chemical Vapor Deposition) Growth of Undoped and Se-Doped GaAS.

Abstract

Described is the quartz-envelope (quartz glass outer jacket) heater, a new type of resistance heater for metal-organic chemical vapor deposition (MOCVD) systems capable of heating substrates to between 600 and 800 C. Results of expitaxial growth and electrical characterization of undoped and Se-doped GaAs from trimethylgallium and arsine are presented. Heate design and application to MOCVD growth and GaAs are detailed. The GaAs epitaxial layers were electrically characterized by Hall effect and Miller profiler measurements. Mobility-versus-free-carrier-co ncentration curves for Se-doped GaAs prepared with the quartz-envelope heater and doped GaAs grown by various MOCVD, vapor-phase epitaxy, and liquid-phase epitaxy techniques indicate the comparable or superior mobilities of material grown with the quartz-envelope heater. Keywords include: Electrical properties; Epitaxial growth; GaAs; Heater design; Metal-organic chemical vapor deposition; MOCVD; Organometallic vapor phase epitaxy; and OMVPE.

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Document Details

Document Type
Technical Report
Publication Date
Mar 08, 1985
Accession Number
ADA154728

Entities

People

  • J. P. Wendt
  • J. S. Ciofalo
  • S. I. Boldish

Organizations

  • The Aerospace Corporation

Tags

Communities of Interest

  • Advanced Electronics
  • Space

DTIC Thesaurus Topics

  • Air Force
  • Ceramic Materials
  • Chemical Vapor Deposition
  • Classification
  • Electrical Properties
  • Epitaxial Growth
  • Hall Effect
  • Heat Energy
  • Liquid Phase Epitaxy
  • Liquid Phases
  • Materials
  • Materials Processing
  • Phase
  • Resistance
  • Security
  • Substrates
  • Vapor Deposition

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology