Microscopic Control of Semiconductor Surface Oxidation.
Abstract
The effect of ultrathin (0.1-10A) chromium overlayers on the reactivity with oxygen of Si(111) and GaAs(110) cleavage surfaces. Synchrotron radiation photoemission shows that for Cr coverages below a critical threshold coverage the overlayer does not affect substantially the oxygen absorption rate. For chromium coverage above threshold the overlayer sharply enhances the oxygen absorption kinetics so that most semiconductor atoms in the surface and near surface region appear oxidized at activated coverage corresponds to the onset of reactive interdiffusion at the Si(111)-Cr and GaAs(110)-Cr interfaces. Therefore we suggest that ultrathin Si-Cr and As-Cr reacted phases created at the surface act as activation layers for semiconductor oxidation. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 15, 1985
- Accession Number
- ADA154799
Entities
People
- A. Franciosi
- C. Caprile
- J. Joyce
- P. Philip
- Shi Chang
Organizations
- University of Minnesota