A Second Order Difference Scheme for Transient Semiconductor Device Simulation.

Abstract

A second order scheme for the solution of the transient fundamental semiconductor device equations is presented which does not suffer from timestep restrictions due to the stiffness of the analytical problem. The second order accuracy as well as the stability properties are demonstrated on the simulation of a p-n-junction diode. keywords: Semiconductors; Singular Perturbations; Finite Differences.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1985
Accession Number
ADA154824

Entities

People

  • C. A. Ringhofer

Organizations

  • University of Wisconsin–Madison

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Accuracy
  • Christianity
  • Current Density
  • Differential Equations
  • Diodes
  • Electrons
  • Equations
  • Mathematics
  • Numerical Analysis
  • Relaxation Time
  • Semiconductor Devices
  • Semiconductors
  • Simulations
  • Steady State
  • Three Dimensional
  • United States
  • Voltage

Fields of Study

  • Engineering

Readers

  • Finite Element Method (FEM) for solving Partial Differential Equations (PDEs)
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Microelectromechanical Systems