Interface Chemistry of Hg(1-x)Cd(x)Te.
Abstract
We present preliminary studies of from temperature formation of the Hg1-xCdxTe(110)-Cr interface. For Cr coverages below 2A, Cr atoms replace Hg atoms in a 10-13 A thick semiconductor layer while elemental Te is released at the surface. The typical high coverage interface morphology consists of an elemental Te surface, a metallic Cr film, a Hg-depleted subsurface layer where Cr is bonded to Te, and finally the ternary semiconductor bulk. This complex interface chemistry is compared with recent results for Hg1-xCdxTe interfaces wilth simple and noble metals.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 08, 1985
- Accession Number
- ADA154876
Entities
People
- A. Franciosi
- D. J. Peterman
- P. Philip
Organizations
- University of Minnesota