A Review of the Physics and Response Models for Burnout of Semiconductor Devices.
Abstract
Physical mechanisms that cause semiconductor devices to fail from electrical overstress--particularly, EMP-induced electrical stress--are described in light of the current literature and the authors' own research. A major concern is the cause and effects of second breakdown phenomena in p-n junction devices. Models of failure thresholds are evaluated for their inherent errors and for their ability to represent the relevant physics. Finally, the response models that relate electromagnetic stress parameters to appropriate failure-threshold parameters are discussed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1984
- Accession Number
- ADA155031
Entities
People
- G. H. Khanaka
- J. H. Yee
- W. J. Orvis
Organizations
- Lawrence Livermore National Laboratory