Photoluminescence Study of Confined Electron Hole Plasma in Ga(x)In(1-x)As Heterostructures.

Abstract

A low energy photoluminescence (PL) emission is observed in Ga(x)In(1-x)As hererostructures. The emission originates from an electron-hole plasma (EHP) confined in a 500 A Ga(y)In(1-y)As layer between the InP substrate and a wider band-gap Ga(x)In(1-x)As layer. A line shape analysis of the EHP emission yields electronic polarization of the PL was observed which indicates a degree of strain in the confining layer. Studies in a magnetic field indicate that the carrier transport in the heterostructure studied is via free carriers and not via excitons. Keywords include: Photoluminescence; Electron-hole plasma; Gallium-indium-arsenide; and heterostructures.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1984
Accession Number
ADA155154

Entities

People

  • C. P. Kuo
  • J. M. Viner
  • M. Gal
  • P. C. Taylor
  • R. M. Cohen

Organizations

  • University of Utah

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Chemical Compounds
  • Compound Semiconductors
  • Electron Holes
  • Electrons
  • Energy Bands
  • Linear Polarization
  • Magnetic Fields
  • Materials
  • Materials Science
  • Military Research
  • Optical Properties
  • Photoluminescence
  • Physics
  • Semiconductors
  • Solid State Physics
  • Three Dimensional

Fields of Study

  • Materials science

Readers

  • Plasma Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics