Determination of Kinetic Parameters of Molecular Beam Epitaxy,

Abstract

A kinetic growth model for molecular beam epitaxy (MBE) was discussed. Furthermore, high energy electron diffraction (HEED) was used as a surface characterization method to provide evidence for this model. GaAs was used as an example to study the growth rate of molecular beam epitaxy. The relation between the growth rate and the flux of Ga was verified by quadrupole mass spectroscopy. The suitable Ga to Al partial pressure ratio for growing materials such as Ga(1-x)al(x)As with specific values of x was investigated theoretically as well as experimentally. Furthermore, the relation between dopant concentration and the corresponding effusion cell temperature was given for Si, Sn and Be. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Apr 17, 1985
Accession Number
ADA155222

Entities

People

  • Jiahao Zhong

Organizations

  • National Air and Space Intelligence Center

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Reactions
  • Crystal Growth
  • Desorption
  • Epitaxial Growth
  • Equations
  • Films
  • Foreign Technology
  • Ionization
  • Liquid Phase Epitaxy
  • Mass Spectrometers
  • Mass Spectrometry
  • Materials
  • Materials Science
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Partial Pressure
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Pulsed Power and Plasma Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics