Electrotransport in Thin Films.

Abstract

Circuit failure in thin film metallization may be due to a combination of electrotransport, thermotransport and grain boundary grooving. In cases where electrotransport and thermotransport are relatively slow, such as in gold, grain boundary grooving may eventually cause void formation and failure of a microelectronic device. Film combinations consisting of substrate/indium/gold significantly retard grain growth, thermal grooving and hole formation under conditions usually experienced in microelectronic circuits. It is believed that indium oxide near the grain boundaries and on the surface is responsible for the stabilization of the gold grain structure and the prevention of hole formation. Keywords: Electrotransport; Thin films; Metallization; Reliability; Microelectronic circuits; Thermotransport; Grain boundary grooving. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1985
Accession Number
ADA155584

Entities

People

  • R. E. Hummel
  • R. T. Dehoff

Organizations

  • University of Florida

Tags

DTIC Thesaurus Topics

  • Auger Electron Spectroscopy
  • Auger Electrons
  • Boundaries
  • Electrical Engineering
  • Electron Spectroscopy
  • Electrons
  • Engineering
  • Failure Mode And Effect Analysis
  • Films
  • Grain Boundaries
  • Mass Flow
  • Materials
  • Materials Engineering
  • Materials Science
  • Oxides
  • Temperature Gradients
  • Thin Films

Readers

  • Agricultural Chemistry/Soil Science
  • Combustion Dynamics and Shock Wave Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene