Laser and Electron Beam Processing of Semiconductors.
Abstract
Research carried out under the subject contract was undertaken to explore the potential of scanning cw beam sources for annealing ion implanted layers in silicon and for recrystallizing thin films of silicon deposited on insulators for subsequent use as layers for device fabrication. This research was a continuation of work begun under a previous DARPA contract in which a cw laser beam was the principal tool. Exploration of several different problems and approaches was undertaken in the research reported here to map out the potential of beam processing for IC and VLSI applications. The principal results are contained in a series of thirteen papers.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1985
- Accession Number
- ADA155914
Entities
People
- James F. Gibbons
Organizations
- Stanford University