HgCdTe Surface and Defect Study Program.
Abstract
This report presents program results for the six-month period ending July 1, 1984. The results presented include determination of the sources of charge at the Photox/HgCdTe interface; measurement and comparison of atomic concentration vs. depth and electrical activity due to nuclear stopping for random and channeled implants using SIMS and C-V techniques respectively; evaluation of changes in bulk trapping levels near the processing altered interface by DLTS; identification and evaluation of new trap levels introduced by implantation damage by DLTS; measurement of surface band structure; continued bond length calculations; results of TEM examination of the CdTe/HgCdTe interface; and finally calculations of dislocation energy and hardness. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1984
- Accession Number
- ADA156079
Entities
People
- C. K. Shih
- G. P. Carey
- J. A. Silberman
- John A. Wilson
- V. A. Cotton