Compound Semiconductor Insulator Interface Research.
Abstract
Work under this contact has been performed in two departments at North Carolina State University. The Departments of Physics and Chemistry. The major thrust of the research program has been in the area of semiconductor/insulator interfaces with the emphasis on the development of materials that could be used for gate insulators in Insulated Gate Field Effect Transistor Devices (IGFET's). To achieve this goal we collaborated with the research group at the Research Triangle Institute (RTI), (with additional support under NAVELEC Contract N00039-81-C-0661), and targeted our research efforts to the development of a gate insulator for (In,Ga)As IGFET's. We have designed and built a low temperature CVD deposition system, and developed a process, using Remote Plasma Enhanced CVD (RPECVD), for depositing a multilayer dielectric consisting of Si3N4 and Si02 layers onto (In, Ga)As. We have determined the conditions necessary to achieve stoichiometry in each of the constituents layers. We have also determined the deposition conditions which minimize the incorporation of defect and impurity atom bonding groups. We have developed a model for the deposition process which can serve as a guideline for deposition of other silicon based insulators, e.g., SiN F and Si0 F alloys.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1985
- Accession Number
- ADA157277
Entities
People
- G. Lucovsky
Organizations
- North Carolina State University