Surface and Interfacial Properties of Ga0.47In0.53As Alloys.
Abstract
A modified Varian GenII. molecular beam epitaxial deposition system was installed and preliminary performance tests have indicated its suitability for growing binary and ternary III-V alloy semiconducting layers. Gallium arsenide layers grown with this MBE system have electrical properties which compare well with those of the best layers grown elsewhere. One 50 layer GaAs/Ga sub x Al sub 1-x (160 A per layer thick) superlattice was used to test the usefulness of the MBE system for the synthesis of conventional heterojunctions and superlattices. Preliminary results have been obtained with Ga sub 0.47 In sub 0.53 As epitaxial layers whose lattice constant matches exactly that of their InP substrates. Work is underway on the synthesis of the ternary alloy layers and heterojunctions whose lattice constants match that of InP. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 15, 1985
- Accession Number
- ADA157343
Entities
People
- H. H. Weider
Organizations
- University of California, San Diego