Theoretical Calculations Supporting Investigation of Metal Contacts to Ultrasmall Semiconductor Structures.
Abstract
The main objective of this project is to perform ab inition electronic structure calculations of the metal-III-V semiconductor interface as the semiconductor layer becomes very thin (a superlattice). These calculations might result in guiding the experimental efforts made by other groups to develop and understand metal contacts to these layers. Let us stress, however, that the proposed collaboration with the experimental groups has not yet been implemented due to different problems in the experimental efforts of the aforementioned groups. In particular, we are interested in the barrier height of the contact and its electronic density of interface states.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1984
- Accession Number
- ADA157531
Entities
People
- F. Flores
Organizations
- Autonomous University of Madrid