Studies on Amorphizing Silicon Using Silicon Ion Implantation.

Abstract

Studies of various conditions to create amorphous Si regions suitable for recrystallization of 0.3 micron and 0.5 micron Si films were made on the Varian 400-10AR Ion Implanter in the Avionics Laboratory and on the General Ionex Corporation 1.7 MeV Tandetron accelerator at Universal Energy Systems. Experimentally, cooling the sample substrate was found to be very important to achieving amorphous regions in the sample. Toward the end of this effort, Dow Corning heat sink compound RTV 340 was found to be a superior mounting medium to rubber cement. Keywords include: Ion Implantation, Silicon, Amorphous, Rutherford Backscattering, and Thin Films.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1985
Accession Number
ADA157684

Entities

People

  • A. W. Mccormick
  • D. C. Ingram
  • M. C. Ohmer
  • N. C. Fernelius
  • T. L. Peterson

Organizations

  • Wright Laboratory

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Aeronautical Laboratories
  • Air Force
  • Air Force Facilities
  • Annealing
  • Avionics
  • Classification
  • Energy Systems
  • Heat Sinks
  • Heat Treatment
  • Ion Beams
  • Ion Implantation
  • Materials
  • Materials Laboratories
  • Optical Materials
  • Radiation Effects
  • Scattering
  • Single Crystals

Readers

  • Polymer Science and Engineering.
  • Semiconductor Device Technology