Hot Electron Emission in Semiconductors.
Abstract
The hot electron temperature of 2D-electron in GaAs/GaAlAs heterostructures depends linearly on the input power as obtained from FIR emission experiments. From saturation absorption measurements we have obtained for the first time energy relaxation times for 2D electrons in GaAs in high magnetic fields. The streaming of hot carriers in crossed electric and magnetic fields has been observed in p-Ge and n-GaAs. This is a potential concept to obtain a FIR laser. Keywords include: Novel tunable FIR sources; Hot electron emission in GaAs/GaAlAs heterostructures; and Streaming of hot carriers in crossed electric and magnetic fields.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 05, 1985
- Accession Number
- ADA157691
Entities
People
- E. Gornik
- M. Helm
- R. A. Hoepfel
Organizations
- University of Innsbruck