Transient Simulation of Submicron Devices.

Abstract

Previously the Legendre-Hermite polynomial expansion of Boltzmann's equation (1) has been used to calculate the velocity-field characteristic of InP at room temperature (2). In this report application of the method to a millimetre wave InP Gunn diode is described. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jul 02, 1985
Accession Number
ADA157748

Entities

People

  • S. C. Van Someren Greve
  • Th. G. Van De Roer

Organizations

  • Eindhoven University of Technology

Tags

Communities of Interest

  • Air Platforms

DTIC Thesaurus Topics

  • Diodes
  • Electrical Engineering
  • Engineering
  • Equations
  • Frequency
  • Gunn Diodes
  • Layers
  • Millimeter Waves
  • Simulations
  • Stratified Fluids
  • Universities
  • Waveforms
  • Waves

Readers

  • Calculus or Mathematical Analysis
  • Semiconductor Device Technology