AuGa2 on GaSb(001): An Epitaxial, Thermodynamically Stabilized Metal/III-V Compound Semiconductor Interface.

Abstract

A new type of metal/semiconductor junction has been developed. Crystalline thin films of the intermetallic compound AuGa2 have been grown by molecular beam epitaxy on GaSb(001) substrates with the orientation AuGa2 is parallel to (0010)Ga2 is parallel to 100GaSb. The resulting films have been characterized by Auger electron spectroscopy, low energy electron diffraction, electron energy loss spectroscopy, scanning electron microscopy, x-ray microprobe analysis, and Rutherford backscattering. The growth procedure is reported, and is discussed in terms of the Au-Ga binary phase diagram. This system is of special interest for contacting technology because the compounds terminate a pseudobinary cut through the Au-Ga-Sb bulk ternary phase diagram, which minimizes the amount of chemical interaction across the metal/semiconductor interface.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1985
Accession Number
ADA157937

Entities

People

  • J. R. Lince
  • R. Stanley Williams

Organizations

  • University of California, Los Angeles

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Auger Electron Spectroscopy
  • Auger Electrons
  • Band Structures
  • Chemistry
  • Compound Semiconductors
  • Diffraction
  • Electron Diffraction
  • Electron Energy
  • Electron Microscopy
  • Electron Spectroscopy
  • Electronics Industry
  • Energy Bands
  • Materials Science
  • Phase Diagrams
  • Semiconductor Devices
  • Semiconductors
  • Spectra

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene