Hot Electron Emission in Semiconductors.
Abstract
The hot electron emission from low and high mobility GaAs/GaAlAs heterostructures was investigated in the FIR range at two frequencies. From the analysis a linear dependence of the electron temperature on input power per electron is found, nearly independent of the sample properties. The interaction of drifting carriers with periodic gratings in high mobility GaAs/GaAlAs systems is a promising scheme to obtain microwatt tunable FIR radiation. Keywords include: Novel tunable FIR sources; Hot electron emission in GaAs/GaAlAs heterostructures; Streaming of hot carriers in crossed electric and magnetic fields.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 15, 1985
- Accession Number
- ADA158042
Entities
People
- E. Gornik
- M. Helm
- R. Hoepfel
Organizations
- University of Innsbruck