Novel Approaches to Passivation of Si for VHSIC - Based on Fundamental Studies.
Abstract
The primary focus of this work was the exploration of fundamental aspects of the oxidation of semiconductor surfaces with a view to addressing some of the problems that have arisen in industry in the growth of ultra thin silicon dioxide layers that are a requirement of smaller, faster CMOS devices. The work falls into three categories, each concerned with a problem that is related to the central issue in a different way: (1) A study of th fundamental properties of the diamond surface. (2) A study of rare earth metal/semiconductor interfaces and compounds. (3) A study of the fundamental characteristics of the oxidation of silicon and the production of thin silicon oxide layers. Keywords include: Silicon; Integrated circuits; Oxidation; Passivation; Surface chemistry; Layers; Thin films; Silicon dioxide; Diamond; Interfaces; and Rare earth compounds.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 24, 1985
- Accession Number
- ADA158238
Entities
People
- I. Lindau
- J. Nogami
- William E. Spicer
Organizations
- Stanford University