MBE Growth of CdTe and Hg sub 1-x Cd sub x Te Films and Multilayer Structures.

Abstract

The MBE growth of CdTe and Hg1-xCdxTe films on InSb and CdTe substrates has been investigated. Growth conditions for high-perfection CdTe films, exactly lattice-matched to InSb substrates, have been identified. These films are ideal for substrates for Hg1-xCdxTe film growth since they are free from low-angle grain boundaries and also provide electrical isolation of the Hg1-xCdxTe film from the InSb substrate. Magnetophotoconductivity studies of abrupt n-CdTe/p-InSb heterojunctions indicate the presence of an n-type inversion layer in the InSb. This could be the basis for a new type of FET device. Conditions for growth of Hg1-xCdxTe films have been explored and films of suitable quality for LWIR device fabrication have been prepared. Originator supplied keywords include: thin films; molecular; beams; epitaxy; growth; MBE; alloys; improvement; structure; cadmium telluride; control; mercury cadmium telluride; doping; extrinsic; multilayers; compounds III-V; and compounds II-IV.

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Document Details

Document Type
Technical Report
Publication Date
Apr 16, 1985
Accession Number
ADA158267

Entities

People

  • A. J. Noreika
  • J. Greggi
  • R. F. C. Farrow
  • S. Wood
  • W. J. Takei

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Boundaries
  • Chemistry
  • Crystal Structure
  • Crystals
  • Electron Microscopy
  • Epitaxial Growth
  • Grain Boundaries
  • Heat Energy
  • Low Angles
  • Materials
  • Measurement
  • Metal-Semiconductor Junctions
  • Military Research
  • Semiconductors
  • Spectra
  • Thin Films
  • Transitions

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology