Investigation of Quantum Effects in Heterostructures.

Abstract

InAs/GaSb and GaSb/AlSb superlattices, GaSb/InAs/GaSb quantum wells and GaAs/GaAlAs heterojunctions were prepared by MBE. Their electronic properties were investigated by optical and transport measurements including photoluminescence, far-infrared magneto-absorption, and the quantized Hall effect.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Mar 20, 1985
Accession Number
ADA158327

Entities

People

  • L. Esaki

Organizations

  • IBM Thomas J. Watson Research Center

Tags

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Diffraction
  • Electron Density
  • Electron Gas
  • Electrons
  • Energy Bands
  • Epitaxial Growth
  • Hall Effect
  • Heterojunctions
  • Materials
  • Molecular Beam Epitaxy
  • Optical Properties
  • Quantum Wells
  • Semiconductor Devices
  • Semiconductors
  • Transitions
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing