Reactive Ion Etching of SiC Thin Films Using Fluorinated Gases,
Abstract
Reactive ion etching (RIE) using fluorinated gases, such as admixtures of CF4 with O2 has been conducted on sputter deposited films of SiC. For comparison purposes, the same experiments with SiO2 films and Si wafers have been conducted. The influence of RF power, pressure, and O2 concentration on etch rate in CF4 + O2, SF6 + H6, and Ar gases has been investigated. RIE mechanisms were studied using in-situ monitoring of excited fluorine emission intensity and DC self bias at the lower electrode. Typical etch rates of Si, SiO2, and SiC are 1220 A/min., 600 A/min., and 375 A/min. in CF4 + 4% O2, 8850 A/min., 500 A/min., and 560 A/min. in SF6 + 50% He, and 340 A/min., 280 A/min., and 270 A/min. in Ar, respectively, at P = 200 Watts, p = 20mTorr, and 300K. Under these conditions the DC self bias levels are -396 volts for CF4 + 4% O2, -350 volts for SF6 + 50% He, and -414 volts for Ar. In both CF4 + 4% O2 and SF6 + 50% He, the etch rates of Si, SiO2, and SiC all increase monotonously with the RF power.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1985
- Accession Number
- ADA158565
Entities
People
- A. J. Steckl
- J. Sugiura
- K. C. Cadien
- W. J. Lu
Organizations
- Rensselaer Polytechnic Institute