Theoretical Model of Hg(1-x)Cd(x)Te Photovoltaic and Photoconductive Infrared Detectors.

Abstract

Theoretical models have been developed for calculating the spectral responsivity and noise of Hg1-xCdxTe photovoltaic and photoconductive infrared detectors. These models are based on the classical theories for p-n junctions and sweepout-limited photoconductors. They incorporate numerous empirical expressions for describing all important material parameters of Hgx-xCdxTe as functions of the composition parameter x and temperature. The excess carrier lifetimes in n-type material are calculated by including radiative and Auger processes. In p-type material, Shockley-Read recombination is also included when appropriate. Provisions are made to include surface effects in photoconductors, but 1/f noise is neglected. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Aug 12, 1985
Accession Number
ADA158668

Entities

People

  • A. A. Fote

Organizations

  • The Aerospace Corporation

Tags

Communities of Interest

  • Energy and Power Technologies
  • Space

DTIC Thesaurus Topics

  • Air Force
  • Band Structures
  • Conduction Bands
  • Detectors
  • Diffusion Coefficient
  • Electrons
  • Energy Bands
  • Energy Gaps
  • Energy Levels
  • Equations
  • Fermi Levels
  • Infrared Detectors
  • Materials
  • Photoconductors
  • Physics Laboratories
  • Quantum Efficiency
  • Shot Noise

Fields of Study

  • Materials science

Readers

  • Computational Modeling and Simulation
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Solar Photovoltaics and Thermoelectric Devices.