Hole Trapping in Thermal Oxides Grown under Various Oxidation Conditions Using Avalanche Injection in Poly-Silicon Gate Structures
Abstract
I/v data (where I is the dc current and v is the maximum value of the ac applied voltage across the device) was analyzed with respect to the theory and it was shown that the hole temperature not only depends on the substrate doping density and the electric field as measured by the Delta V subscript FB is not only a characteristic of the way that an oxide is grown and annealed, but it also depends on the quality of the substrate and its detailed thermal history. This substrate effect shows itself in the I/v characteristic of a particular device. If the dc current Idc was kept constant at a particular level (as was the case for our experiments), then the v value would represent the temperature of the hot carriers. Since the evidence suggests that the hot carriers generate trap levels, then any change in carrier temperature would reflect in Delta V subscript FB. These substrate related effects were found to be significant.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 15, 1985
- Accession Number
- ADA158703
Entities
People
- B. R. Cairns
- K. V. Anand
- R. J. Strain