DLTS (Deep-Level Transient Spectroscopy) Analysis of Germanium and Al sub x Ga sub 1-x as Solar Cells.
Abstract
The objective of this research project is to investigate the radiation-induced deep-level defects in the one-MeV electron irradiated germanium and AlxGa1-xAs with x=0.05 and 0.17 using the Deep-Level Transient Spectroscopy (DLTS) and Capacitance - Voltage (C-V) techniques. The I-V and C-V measurements were employed to estimate the background concentration in Ge irradiated by the one-MeV electrons for fluences of 1x10 to the 14th power, 1x10 to the 15th power, 1x10 to the 16th power per sq cm and in AlxGa1-xAs for fluences of 10 to the 15th power and 1x10 to the 16th power. The C-V and DLTS measurements were used to determine the defect parameters such as energy level, defect density and capture cross section of both electron and hole traps. This information is vital for designing a radiation hard cascade solar cell using materials such as germanium, GaAs and AlxGa1-xAs. Section II provides a brief overview of the radiation induced defects in germanium and AlGaAs as reported in the literature. In section III the results of the I-V, C-V and DLTS measurements on germanium samples are discussed. The physical origin of the radiation-induced defects are also depicted. Section VI described the DLTS and C-V results for the AlxGa1-xAs (with x = 0.05 and 0.17) specimen. Conclusions are given in the section V.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1985
- Accession Number
- ADA159114
Entities
People
- S. S. Li
Organizations
- Universal Energy Systems