Submicron Phonics I.

Abstract

Theoretical prediction of the speed of Gallium Arsenide submicron-devices by considering for the first time possible effects of phonon disturbances on the electron-mobility. The displaced maxwellian model for hot electrons in the central valley of polar semiconductors was extended to include the detailed time-dependence of longitudinal optical (LO) phonon amplification in n-GaAs at room-temperature in the velocity-overshoot regime. Assuming a practically instantaneous adaption of the electrons to the LO-phonon built-up, which in turn is calculated from the time-dependent Phonon-Boltzmann-equation, the FORTRAN-code for spatially homogenous transport was developed and put to a first use.

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Document Details

Document Type
Technical Report
Publication Date
Mar 22, 1985
Accession Number
ADA159421

Entities

Organizations

  • University of Graz

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Boltzmann Equation
  • Crystal Lattice Vibrations
  • Electron Mobility
  • Electrons
  • Gallium Arsenides
  • Gunn Effect
  • Materials
  • Mobility
  • Numerical Analysis
  • Phonons
  • Picosecond Time
  • Semiconductors
  • Steady State
  • Time Dependence
  • Transport Ships

Fields of Study

  • Materials science

Readers

  • Fluid Dynamics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics