Fundamental Studies and Device Development in Beta Silicon Carbide.

Abstract

The research of this reporting period has involved the growth of large area thin films of Beta-SiC; the study of the effect of defects at the interface region on dopant getting; various aspects of doping via ion implantation, calculation of the critical energies to cause amorphization, etching of the resultant amorphous layer, and charge carrier activation during annealing; n(+)p junction development via ion implantation, and oxidation and reactive ion etching studies. Originator supplied keywords include: Chemical vapor deposition; Electronic materials; Electron microscopy; Secondary ion mass spectroscopy; Electrical properties; MOS device; Rutherford Backscattering; Oxidation; Schottky diode.

Document Details

Document Type
Technical Report
Publication Date
Aug 31, 1985
Accession Number
ADA159446

Entities

People

  • Robert F Davis

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Ceramic Materials
  • Charge Carriers
  • Chemical Vapor Deposition
  • Electrical Properties
  • Electron Microscopy
  • Electronic Materials
  • Films
  • Ion Implantation
  • Ions
  • Mass Spectroscopy
  • Materials
  • Reactive Ion Etching
  • Schottky Diodes
  • Silicon Carbide
  • Thin Films
  • Vapor Deposition

Fields of Study

  • Materials science

Readers

  • Powder metallurgy of Titanium alloys.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene